MG150J7KS50

MG150J7KS50, Silicon N Channel IGBT, 600V, 150A, 320W, Toshiba Semiconductor

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Price:: US $80.00~95.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 30 :	95.00 / Piece
31 ~ 40 :	88.00 / Piece
41 ~ 50 :	80.00 / Piece

PartNumber:: MG150J7KS50

Brand:: Toshiba Semiconductor - Toshiba | D/C: 09+

Availability:: Supply Ability: 1000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-03-28

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Part Number:MG150J7KS50
US $80.00 - 95.00
Quantity:

piece

Product Summary

The MG150J7KS50 is a Silicon N Channel IGBT.

Parametrics

MG150J7KS50 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 600 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC IC: 150A; 1ms ICP: 300A; (4)Forward current, DC IF: 150A; 1ms IFM: 300A; (5)Collector power dissipation (Tc = 25℃), PC: 320 W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500 (AC 1 min.) V; (9)Screw torque (Terminal / mounting): 3 / 3 N·m.

Features

MG150J7KS50 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)7 IGBTs built into 1 package; (4)Enhancement-mode; (5)High speed type IGBT: Inverter stage: VCE (sat) = 2.8V (max) (@IC = 150A); tf = 0.5μs (max) (@IC = 150A); trr = 0.3μs (max) (@IF = 150A); (6)Outline: TOSHIBA 2-110A1B; (7)Weight: 520g.