Product Summary

The MG150J2YS45 is an N channel IGBT. The applications of it include high power switching and motor control.

Parametrics

MG150J2YS45 absolute maximum ratings: (1)collector-emitter voltage: 600V; (2)gate-emitter voltage: ±20V; (3)collector current: IC: 150A, ICP: 300A; (4)forward current: IF: 150A, IFM: 300A; (5)collector power dissipation: 780W; (6)junction temperature: 150℃; (7)storage temperature range: -40℃ to +125℃; (8)isolation voltage: 2500V; (9)screw torque: 3/3N.m.

Features

MG150J2YS45 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode; (5)High speed: tf = 0.30μs (Max) (IC = 150A), trr = 0.15μs (Max) (IF = 150A); (6)Low saturation voltage: VCE (sat) = 2.70V (Max) (IC = 150A).

Diagrams

MG150J2YS45 block diagram