Product Summary

The MBN1200E25C is a Silicon N-channel IGBT.

Parametrics

MBN1200E25C absolute maximum ratings: (1)Collector Emitter Voltage, VCES: 600V; (2)Gate Emitter Voltage, VGES: ±20V; (3)Collector Current, DC, IC: 400A; 1ms ICp: 800A; (4)Forward Current, DC IF: 400A; 1ms IFM: 800A; (5)Collector Power Dissipation, Pc: 1,000W; (6)Junction Temperature, Tj: -40 ~ +150℃; (7)Storage Temperature, Tstg: -40 ~ +125℃; (8)Isolation Voltage VISO: 2,500VRMS (AC 1 minute); (9)Screw Torque Terminals: 1.96(20) N.m (kgf.cm) ; Mounting: 1.96(20) N.m (kgf.cm).

Features

MBN1200E25C features: (1)High speed and low saturation voltage; (2)low noise due to built-in free-wheeling diode- ultra soft fast recovery diode(USFD); (3)Isolated head sink (terminal to base).

Diagrams

MBN1200E25C block diagram