(China (Mainland))
Product Summary
The IXSN35N120AU1 is a High Voltage IGBT module. The applications of the include AC motor speed control, DC servo and robot drives, DC choppers, Uninterruptible power supplies (UPS), Switch-mode and resonant-mode power supplies.
Parametrics
IXSN35N120AU1 absolute maximum ratings: (1)VCES, TJ= 25℃ to 150℃: 1200 V; (2)VCGR, TJ= 25℃ to 150℃; RGE = 1 MΩ: 1200 A; (3)VGES, Continuous: ±20 V; (4)VGEM, Transient: ±30 V; (5)IC25, TC = 25℃: 70A; (6)IC90, TC = 90℃: 35A; (7)ICM, TC = 25℃, 1 ms: 140 A; (8)SSOA VGE= 15 V, TVJ = 125℃, RG = 22Ω; (RBSOA) Clamped inductive load, L = 30 μH: ICM = 70 A @ 0.8 VCES; (9)tSC(SCSOA), VGE= 15 V, VCE = 0.6·VCES, TJ = 125℃, RG = 22Ω, non repetitive: 10μs; (10)PC, TC = 25℃ IGBT: 300 W; (11)PD, Diode: 175 W.
Features
IXSN35N120AU1 features: (1)International standard package miniBLOC (ISOTOP) compatible; (2)Aluminium-nitride isolation, high power dissipation; (3)Isolation voltage 3000 V~; (4)Low VCE(sat), for minimum on-state conduction losses; (5)Fast Recovery Epitaxial Diode, short trr and IRM; (6)Low collector-to-case capacitance (< 50 pF), reducesd RFI; (7)Low package inductance (< 10 nH), easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 IXSN35N120AU1 |
Ixys |
IGBT Transistors 35 Amps 1200V 4 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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IXSN 55N120A |
Other |
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Data Sheet |
Negotiable |
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IXSN35N100U1 |
Ixys |
IGBT Transistors 35 Amps 1000V |
Data Sheet |
Negotiable |
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IXSN35N120AU1 |
Ixys |
IGBT Transistors 35 Amps 1200V 4 Rds |
Data Sheet |
Negotiable |
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IXSN50N60BD2 |
Ixys |
IGBT Transistors 75 Amps 600V 2.5 Rds |
Data Sheet |
Negotiable |
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IXSN50N60BD3 |
Ixys |
IGBT Transistors 75 Amps 600V 2.5 Rds |
Data Sheet |
Negotiable |
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IXSN52N60AU1 |
Ixys |
IGBT Transistors 80 Amps 600V 3.0 Rds |
Data Sheet |
Negotiable |
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