Product Summary

The IXSN35N120AU1 is a High Voltage IGBT module. The applications of the include AC motor speed control, DC servo and robot drives, DC choppers, Uninterruptible power supplies (UPS), Switch-mode and resonant-mode power supplies.

Parametrics

IXSN35N120AU1 absolute maximum ratings: (1)VCES, TJ= 25℃ to 150℃: 1200 V; (2)VCGR, TJ= 25℃ to 150℃; RGE = 1 MΩ: 1200 A; (3)VGES, Continuous: ±20 V; (4)VGEM, Transient: ±30 V; (5)IC25, TC = 25℃: 70A; (6)IC90, TC = 90℃: 35A; (7)ICM, TC = 25℃, 1 ms: 140 A; (8)SSOA VGE= 15 V, TVJ = 125℃, RG = 22Ω; (RBSOA) Clamped inductive load, L = 30 μH: ICM = 70 A @ 0.8 VCES; (9)tSC(SCSOA), VGE= 15 V, VCE = 0.6·VCES, TJ = 125℃, RG = 22Ω, non repetitive: 10μs; (10)PC, TC = 25℃ IGBT: 300 W; (11)PD, Diode: 175 W.

Features

IXSN35N120AU1 features: (1)International standard package miniBLOC (ISOTOP) compatible; (2)Aluminium-nitride isolation, high power dissipation; (3)Isolation voltage 3000 V~; (4)Low VCE(sat), for minimum on-state conduction losses; (5)Fast Recovery Epitaxial Diode, short trr and IRM; (6)Low collector-to-case capacitance (< 50 pF), reducesd RFI; (7)Low package inductance (< 10 nH), easy to drive and to protect.

Diagrams

IXSN35N120AU1 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXSN35N120AU1
IXSN35N120AU1

Ixys

IGBT Transistors 35 Amps 1200V 4 Rds

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXSN35N120AU1
IXSN35N120AU1

Ixys

IGBT Transistors 35 Amps 1200V 4 Rds

Data Sheet

Negotiable 
IXSN80N60A
IXSN80N60A

Other


Data Sheet

Negotiable 
IXSN80N60BD1
IXSN80N60BD1

Ixys

IGBT Transistors 160 Amps 600V 2.5 Rds

Data Sheet

Negotiable 
IXSN80N60AU1
IXSN80N60AU1

Ixys

IGBT Transistors 80 Amps 600V

Data Sheet

Negotiable 
IXSN62N60U1
IXSN62N60U1

Ixys

IGBT Transistors 90 Amps 600V 2.5 Rds

Data Sheet

Negotiable 
IXSN55N120AU1
IXSN55N120AU1

Ixys

IGBT Transistors 110 Amps 1200V 4 Rds

Data Sheet

Negotiable