Product Summary
The FZ600R17KE3 is an IGBT-module.
Parametrics
FZ600R17KE3 absolute maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES: 1700 V; (2)Kollektor-Dauergleichstrom TC = 80℃, IC,nom: 600 A; (3)DC-collector current TC = 25℃, IC: 840 A; (4)Periodischer Kollektor Spitzenstrom repetitive peak collector current, tP = 1 ms, TC = 80℃, ICRM: 1200 A; (5)Gesamt-Verlustleistung total power dissipation TC=25℃, Transistor, Ptot: 3150W; (6)Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES: +/-20V.
Features
FZ600R17KE3 features: (1)Kollektor-Emitter Satigungsspannung collector-emitter saturation voltage IC = 1800 A, VGE = 15V, Tvj = 25℃ VCE sat:2.45 V; (2)IC = 1800 A, VGE = 15V, Tvj = 125℃ VCE sat: 6.4 V; (3)Eingangskapazita input capacitance f = 1MHz,Tvj = 25℃,VCE = 25V, VGE = 0V Cies: 54 nF.
Diagrams
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FZ600R17KE3 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 1.07KA |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FZ600R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 600A SINGLE |
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FZ600R12KE3B1 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 900A |
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FZ600R12KE3S |
Infineon Technologies |
IGBT Transistors 1200V 600A SINGLE |
Data Sheet |
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FZ600R12KE4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 600A |
Data Sheet |
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FZ600R12KP4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 600A |
Data Sheet |
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FZ600R12KS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 700A |
Data Sheet |
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