Product Summary

The FZ1200R33KF2-B3 is an IGBT module from Infineon Technologies.

Parametrics

FZ1200R33KF2-B3 absolute maximum ratings: (1)collector-emitter voltage, VCES: 3300V; (2)DC-collector current, IC: 1200A; (3)repetitive peak collector current tp=1 ms, ICRM: 2400A; (4)total power dissipation, Tc=25℃, Transistor /transistor, Ptot: 14700W; (5)gate-emitter peak voltage, VGE: ±20V; (6)DC forward current, IF: 1200A; (7)repetitive peak forw. current, tp=1ms, IFRM: 2400A; (8)insulation test voltage RMS, f=50 Hz, t= 1 min, Visol: 10,2 kV.

Features

FZ1200R33KF2-B3 features: (1)Collector-emitter saturation voltage, IC = 1200A, VGE = 15V, Tvj = 25℃, VCEsat: 3.4 to 4.25 V; IC = 1200A, VGE = 15V, Tvj = 125℃, VCEsat: 4.3 to 5.0 V; (2)Gate threshold voltage, IC = 80mA, VCE = VGE, Tvj = 25℃, VGE(th): 4.2 to 6.0 V; (3)Gate charge, VGE = -15V to +15V, QG: 22μC; (4)Input capacitance, f = 1MHz, Tvj = 25℃, VCE = 25V, VGE = 0V, Cies: 150 nF; (5)Reverse transfer capacitance, f = 1MHz, Tvj = 25℃, VCE = 25V, VGE = 0V, Cres: 8 nF; (6)Collector-emitter cut-off current, VCE = 1700V, VGE = 0V, Tvj = 25℃, ICES: 5 mA; (7)Gate-emitter leakage current, VCE = 0V, VGE = 20V, Tvj = 25℃, IGES: 400 nA.

Diagrams

FZ1200R33KF2-B3 block diagram