Product Summary

The FF800R17KF6B2 is an IGBT-Module. This technical information specifies semiconductor device but guarantees no characteristics. The FF800R17KF6B2 is valid with the appropriate technical explanations. The valve of collector-emitter saturation voltage is 2,40V. The date threshold voltage IS 5,8V. The gate charge is 9, 00mC.

Parametrics

FF800R17KF6B2 absolute maximum ratings: (1)collector emitter voltage, Tvj= 25℃, VCES: 1700V; (2)DC collector current, Tc= 80℃, IC, nom: 800A; (3)DC collector current, Tc= 25℃, IC: 1800A; (4)repetitive peak collector current, tp= 1ms, Tc= 80℃, ICRM: 1600A; (5)total power dissipation, Tc= 25℃, Transistor, Ptot: 4,45W; (6)gate emitter peak voltage, VGES: +/- 20V.

Features

FF800R17KF6B2 features: (1)Forward volatge: 1,90V; (2)Peak reverse recovery current: 1150, 1250A; (3)Recovered charge: 305, 510μC; (4)Reverse recovery energy: 190, 340mJ; (5)Thermal resistance, junction to case: 42,0K/kW; (6)Thermal resistance, canse to heatsink: 52,0K/kW.

Diagrams

FF800R17KF6B2 block diagram