Product Summary

The CM1200HD-50H is a high voltage insulated Gate bipolar transistor.

Parametrics

CM1200HD-50H absolute maximum ratings: (1)Collector-emitter voltage: 1700V; (2)Gate-emitter voltage: ±20V; (3)Maximum collector dissipation: 12500W; (4)Junction temperature: –40 ~ +150℃; (5)Storage temperature: -40 ~+125℃; (6)Isolation voltage: 4000V; (7)Mounting torque: Main terminals screw M8, 6.67 ~ 13.00 N.m; Mounting screw M6, 2.84 ~ 6.00 N.m; Auxiliary terminals screw M4, 0.88 ~ 2.00 N.m; (8)Mass: 1.5kg.

Features

CM1200HD-50H features: (1)Collector cutoff current, VCE = VCES, VGE = 0V: 24mA max; (2)Gate-emitter threshold voltage, IC = 120mA, VCE = 10V: 4.5 V min, 5.5V typ, 6.5V max; (3)Input capacitance, VCE=10V, VGE=0V: 140nF; (4)Output capacitance,VCE=10V, VGE=0V: 20.0nF; (5)Reverse transfer capacitance, VCE=10V, VGE=0V: 7.6nF; (6)Total gate charge, VCC = 850V, IC = 1200A, VGE = 15V: 6.6μC; (7)Emitter-collector voltage, IE = 1200A, VGE = 0V: 2.40 V typ; 3.12 V max.

Diagrams

CM1200HD-50H block diagram