Product Summary

The 6MBI150U4B-120-50 is an IGBT module.

Parametrics

6MBI150U4B-120-50 absolute maximum ratings: (1)Collector-Emitter voltage, VCES: 1200V; (2)Gate-Emitter voltage, VGES: ±20V; (3)Collector current, IC, Continuous, Tc=25℃: 200A; Tc=80℃: 150A; Icp, 1ms, Tc=25℃: 400A; Tc=80℃: 300A; -Ic: 150A; -Ic pulse, 1ms: 300A; (4)Collector Power Dissipation, 1 device, Pc: 735W; (5)Junction temperature, TJ: 150℃; (6)Storage temperature, Tstg: -40 to 125℃.

Features

6MBI150U4B-120-50 features: (1)Zero gate voltage collector current, ICES: 1.0mA; (2)Gate-Emitter leakage current, IGES: 200nA; (3)Gate-Emitter threshold voltage, VGE(th): 4.5 to 8.5V; (4)Collector-Emitter saturation voltage, Ic=150A, VGE=15V, VCE(sat) (terminal), Tj=25℃: 2.45 to 2.60V; Tj=125℃: 2.65V; VCE(sat) (chip), Tj=25℃: 1.90 to 2.05V; Tj=125℃: 2.10V.

Diagrams

6MBI150U4B-120-50 block diagram