(China (Mainland))
Product Summary
The MMDF3N02HDR2 is a miniature surface mount MOSFET. The MMDF3N02HDR2 is capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Typical applications of the MMDF3N02HDR2 are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. The MMDF3N02HDR2 can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
Parametrics
MMDF3N02HDR2 absolute maximum ratings: (1)Drain–to–Source Voltage, VDSS: 20 Vdc; (2)Drain–to–Gate Voltage, VDGR: 20 Vdc; (3)Gate–to–Source Voltage, VGS: ± 20 Vdc; (4)Total Power Dissipation , PD: 2.0 Watts; (5)Operating and Storage Temperature Range, TJ, Tstg: – 55 to; (6)150℃; (7)Maximum Lead Temperature for Soldering Purposes, 1/8 inch from case for 10 seconds, TL: 260℃.
Features
MMDF3N02HDR2 features: (1)Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life; (2)Logic Level Gate Drive – Can Be Driven by Logic ICs; (3)Miniature SO–8 Surface Mount Package – Saves Board Space; (4)Diode Is Characterized for Use In Bridge Circuits; (5)Diode Exhibits High Speed, With Soft Recovery; (6)IDSS Specified at Elevated Temperature; (7)Avalanche Energy Specified; (8)Mounting Information for SO–8 Package Provided.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MMDF3N02HDR2 |
ON Semiconductor |
MOSFET 20V 3A N-Channel |
Data Sheet |
Negotiable |
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MMDF3N02HDR2G |
ON Semiconductor |
MOSFET NFET SO8D 20V 3.8A 90mOhm |
Data Sheet |
Negotiable |
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