Product Summary

The 2N4209 is a PNP saturated switching transistor designed for high speed switching applications.

Parametrics

2N4209 absoloute maximum ratings: (1)collector base voltage, VCBO: 15V; (2)collector emitter voltage, VCEO: 15V; (3)emitter base voltage, VEBO: 4.5V; (4)collector current, IC: 200mA; (5)power dissipation, PD: 0.5W; (6)power dissipation (Tc=25℃), PD: 1.2W; (7)operating and storage junction temperature, Tj, Tstg: -65 to 200℃.

Features

2N4209 features: (1)Maximum collector power dissipation (Pc): 300mW; (2)Maximum collector-base voltage (Ucb): 15V; (3)Maximum collector-emitter voltage (Uce): 15V; (4)Maximum emitter-base voltage (Ueb): 4V; (5)Maximum collector current (Ic max): 50mA; (6)Maximum junction temperature (Tj): 200℃; (7)Transition frequency (ft): 850MHz ; (8)Collector capacitance (Cc), Pf: 3.

Diagrams

2N4209 dimensions

2N4220
2N4220

Other


Data Sheet

Negotiable 
2N4220A
2N4220A

Other


Data Sheet

Negotiable 
2N4221
2N4221

Other


Data Sheet

Negotiable 
2N4221A
2N4221A

Other


Data Sheet

Negotiable 
2N4234
2N4234

Central Semiconductor

Transistors Bipolar (BJT) PNP Gen Pur SS

Data Sheet

0-1: $0.99
1-25: $0.89
25-100: $0.79
100-250: $0.73
2N4235
2N4235

Central Semiconductor

Transistors Bipolar (BJT) PNP Power SW

Data Sheet

0-500: $1.04
500-1000: $1.01
1000-2000: $0.89