(China (Mainland))
Product Summary
The 2N4209 is a PNP saturated switching transistor designed for high speed switching applications.
Parametrics
2N4209 absoloute maximum ratings: (1)collector base voltage, VCBO: 15V; (2)collector emitter voltage, VCEO: 15V; (3)emitter base voltage, VEBO: 4.5V; (4)collector current, IC: 200mA; (5)power dissipation, PD: 0.5W; (6)power dissipation (Tc=25℃), PD: 1.2W; (7)operating and storage junction temperature, Tj, Tstg: -65 to 200℃.
Features
2N4209 features: (1)Maximum collector power dissipation (Pc): 300mW; (2)Maximum collector-base voltage (Ucb): 15V; (3)Maximum collector-emitter voltage (Uce): 15V; (4)Maximum emitter-base voltage (Ueb): 4V; (5)Maximum collector current (Ic max): 50mA; (6)Maximum junction temperature (Tj): 200℃; (7)Transition frequency (ft): 850MHz ; (8)Collector capacitance (Cc), Pf: 3.
Diagrams
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 2N4208 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Sat SW |
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2N4221A |
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Data Sheet |
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2N4222 |
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Data Sheet |
Negotiable |
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