(China (Mainland))
Product Summary
The EFC1212D is a Low Distortion GaAs Power FET.
Parametrics
EFC1212D absolute maximum ratings: (1)Vds, Drain-Source Voltage: 14V to 10V; (2)Vgs, Gate-Source Voltage: -8V to -4.5V; (3)Ids, Drain Current, Idss: 270mA; (4)Igsf, Forward Gate Current: 30mA to 5mA; (5)Pin, Input Power: 26dBm@3dB Compression; (6)Tch, Channel Temperature: 150℃ to 175℃; (7)Tstg, Storage Temperature: -65/175℃ to -65/150℃; (8)Pt, Total Power Dissipation: 3.2W to 2.7W.
Features
EFC1212D features: (1)Hermetic 100mil ceramic flange package; (2)+28.0dBm typical output power; (3)High BVgd FOR 10V bias; (4)9.0dB typical power gain at 8GHz; (5)0.3 × 1200 micron recessed “mushroom” gate; (6)Si3N4 passivation; (7)Advanced epitaxial doping profile provides high power efficiency, linearity and reliability.
Diagrams
